GOPOWER / GALLIA research consortium - Research
Power device structure
Project plans to validate the potentiality of Ga2O3 for future power devices by the elaboration of p-type epi-layers and their integration in PiN diodes.
-Advanced modelling, device simulations will be used to determine the parameters as layer thicknesses, doping levels, VBR, impact ionization, optimal type and parameters of edge terminations for two types (different i-layer) PiN diode structures.
High voltage measurements will be performed with the aim measure device VBR and estimate EBR of our material . High temperature characterizations of diodes will be performed as well.
An analysis of the metal-insulator-semiconductor (MIS) interface will be carried out through capacitance-voltage methods, for appropriate field-plate and passivation technologies.